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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor TIP107 DESCRIPTION *High DC Current Gain: hFE = 1000(Min)@ IC= -3A *Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) *Low Collector-Emitter Saturation Voltage: VCE(sat) = -2.0V(Max)@ IC= -3A = -2.5V(Max)@ IC= -8A *Complement to Type TIP102 APPLICATIONS *Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Continuous Collector Power Dissipation @TC=25 Collector Power Dissipation @Ta=25 Junction Temperature Storage Temperature Range VALUE -100 -100 -5 -8 -15 -1 80 UNIT V V V A A A PC W 2 150 -65~150 Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.56 62.5 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TIP107 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0 -100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A ,IB= -6mA -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -8A ,IB= -80mA -2.5 V VBE(on) ICBO Base-Emitter On Voltage IC= -8A ; VCE= -4V -2.8 V A Collector Cutoff Current VCB= -100V, IE=0 -50 ICEO Collector Cutoff Current VCE= -50V, IB=0 -50 A IEBO Emitter Cutoff Current VEB= -5V; IC=0 -2 mA hFE-1 DC Current Gain IC= -3A ; VCE= -4V 1000 20000 hFE-2 DC Current Gain IC= -8A ; VCE= -4V 200 COB Output Capacitance IE= 0 ; VCB= -10V,f= 0.1MHz 300 pF isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor TIP107 isc Websitewww.iscsemi.cn |
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